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MT29F3T08EUHBBM4-3R:B

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MT29F3T08EUHBBM4-3R:B

Technology : FLASH - NAND

Product Category : Memory ICs

Memory Type : Non-Volatile

Write Cycle Time - Word, Page : -

Supplier Device Package : -

Access Time : -

Memory Format : Flash

Part Status : Active

Memory Size : 3Tb (384G x 8)

Packaging : -

Operating Temperature : 0°C ~ 70°C (TA)

Minimum Quantity : 1120

Memory Interface : Parallel

Package / Case : -

Mounting Type : -

Clock Frequency : 333MHz

Voltage - Supply : 2.5 V ~ 3.6 V

Series : -

Manufacturer : Micron Technology

Description : IC FLASH 3T PARALLEL 333MHZ

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The MT29F3T08EUHBBM4-3R:B,from Micron Technology,is Memory ICs.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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