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IRG7PH30K10PBF

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Shenzhen Century Tongxin Electronics Co., Ltd

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IRG7PH30K10PBF

Gate-Emitter Leakage Current : 100 nA

Product Category : IGBT Transistors

Mounting Style : Through Hole

Continuous Collector Current at 25 C : 33 A

Pd - Power Dissipation : 210 W

Collector- Emitter Voltage VCEO Max : 1.2 kV

Package / Case : TO-247-3

Maximum Operating Temperature : + 175 C

Maximum Gate Emitter Voltage : +/- 30 V

Packaging : Tube

Configuration : Single

Collector-Emitter Saturation Voltage : 2.05 V

Manufacturer : IR / Infineon

Description : IGBT Transistors Trnch IGBT 1200V 10A single IGBT

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The IRG7PH30K10PBF,from IR / Infineon,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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