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IRGP4660DPBF

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Shenzhen Century Tongxin Electronics Co., Ltd

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IRGP4660DPBF

Gate-Emitter Leakage Current : 70 uA

Product Category : IGBT Transistors

Mounting Style : Through Hole

Continuous Collector Current at 25 C : 50 A

Pd - Power Dissipation : 134 W

Collector- Emitter Voltage VCEO Max : 600 V

Package / Case : TO-247-3

Maximum Operating Temperature : + 175 C

Packaging : Tube

Maximum Gate Emitter Voltage : 20 V

Collector-Emitter Saturation Voltage : 1.9 V

Manufacturer : IR / Infineon

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The IRGP4660DPBF,from IR / Infineon,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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