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STGWA40H60DLFB

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Shenzhen Century Tongxin Electronics Co., Ltd

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STGWA40H60DLFB

Gate-Emitter Leakage Current : -

Product Category : IGBT Transistors

Mounting Style : Through Hole

Continuous Collector Current at 25 C : -

Pd - Power Dissipation : 283 W

Collector- Emitter Voltage VCEO Max : 600 V

Package / Case : TO-247-3

Maximum Operating Temperature : + 175 C

Maximum Gate Emitter Voltage : 2 V

Configuration : Single

Collector-Emitter Saturation Voltage : 1.6 V

Manufacturer : STMicroelectronics

Description : IGBT Transistors

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The STGWA40H60DLFB,from STMicroelectronics,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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